应变硅纳米线隧道场效应管和逆变器

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) Pub Date : 2013-10-01 DOI:10.1109/E3S.2013.6705867

Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl

{"title":"应变硅纳米线隧道场效应管和逆变器","authors":"Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl","doi":"10.1109/E3S.2013.6705867","DOIUrl":null,"url":null,"abstract":"Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strained Si nanowire tunnel FETs and inverters\",\"authors\":\"Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl\",\"doi\":\"10.1109/E3S.2013.6705867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].\",\"PeriodicalId\":231837,\"journal\":{\"name\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/E3S.2013.6705867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/E3S.2013.6705867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

陡坡器件，如隧道场效应管(tfet)，在300K时提供小的亚阈值斜率(SS) < 60mV/dec和低关断，从而实现低动态和静态功耗。模拟结果表明，在相同待机功率和开关能量下，tfet在VDD ~ 0.3 V时的性能比mosfet高(x8)[1]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Strained Si nanowire tunnel FETs and inverters

Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

自引率

0.00%

发文量