MRAM存储技术的现状与展望(特邀)

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346850

S. Tehrani

{"title":"MRAM存储技术的现状与展望(特邀)","authors":"S. Tehrani","doi":"10.1109/IEDM.2006.346850","DOIUrl":null,"url":null,"abstract":"This paper provide an overview of the recent progress and the nature outlook of MRAM technology. Details of the operation, performance and reliability of Freescale's commercial 4Mbit MRAM device will be presented. Operation and reliability results demonstrating the extension of toggle MRAM to meet industrial and automotive requirements are presented, and new research results on higher-performance materials and advanced scaling approaches are discussed","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"Status and Outlook of MRAM Memory Technology (Invited)\",\"authors\":\"S. Tehrani\",\"doi\":\"10.1109/IEDM.2006.346850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provide an overview of the recent progress and the nature outlook of MRAM technology. Details of the operation, performance and reliability of Freescale's commercial 4Mbit MRAM device will be presented. Operation and reliability results demonstrating the extension of toggle MRAM to meet industrial and automotive requirements are presented, and new research results on higher-performance materials and advanced scaling approaches are discussed\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 34

摘要

本文综述了MRAM技术的最新进展和本质展望。将详细介绍飞思卡尔商用4Mbit MRAM器件的操作、性能和可靠性。介绍了切换MRAM的运行和可靠性结果，证明了切换MRAM已扩展到满足工业和汽车需求，并讨论了高性能材料和先进缩放方法的新研究成果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Status and Outlook of MRAM Memory Technology (Invited)

This paper provide an overview of the recent progress and the nature outlook of MRAM technology. Details of the operation, performance and reliability of Freescale's commercial 4Mbit MRAM device will be presented. Operation and reliability results demonstrating the extension of toggle MRAM to meet industrial and automotive requirements are presented, and new research results on higher-performance materials and advanced scaling approaches are discussed

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 International Electron Devices Meeting

自引率

0.00%

发文量