栅极优先集成基于钆的高k介电体与金属栅极电极

2009 3rd International Conference on Signals, Circuits and Systems (SCS) Pub Date : 2009-11-01 DOI:10.1109/ICSCS.2009.5412232

H. Gottlob, M. Schmidt, H. Kurz

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引用次数: 0

摘要

在这项工作中，我们提出了一个栅极优先的工艺平台，用于基于钆(Gd)的高k电介质和金属栅极的器件集成。外延Gd2O3和GdSiO高k层与氮化钛(TiN)栅极集成。详细研究了栅极堆的热稳定性。特别是使用TiN的金属插入多晶硅方法使高温加工成为可能。

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Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes

In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd2O3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.

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2009 3rd International Conference on Signals, Circuits and Systems (SCS)

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