带温度补偿的带隙参考电路

2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT) Pub Date : 2016-06-05 DOI:10.1109/ICMMT.2016.7761693

Wang Shaodong, W. Shuai

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引用次数: 0

摘要

本文在分析带隙基准(BGR)基本原理的基础上，利用具有发射极面积比的差分npn晶体管对产生与绝对温度(PTAT)成正比的电流。提出了一种较为简单的电流补偿方法来优化BGR的温度特性。该BGR已在0中得到验证。8um BiCMOS工艺库，实现温度系数(TC)为5。在-50°C ~ 150°C的温度范围内，5V电源下，BGR的输出变化小于1。7mV，供电范围3V ~ 10V，功耗更低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A bandgap reference circuit with temperature compensation

These After analyzing the basic principle of bandgap reference(BGR), a differential pair of npn transistors with an emitter area ratio are used to produce a current which is proportional to absolute temperature (PTAT) in this paper. A relatively simple current compensation methods is illustrated to optimize the temperature characteristic of the BGR. This BGR has been verified in 0. 8um BiCMOS process library and achieves a temperature coefficient (TC) of 5. 98ppm/ °C with a temperature range from -50 °C to 150 °C at 5V power supply, the variation in the output of BGR is less than 1. 7mV with a power supply range from 3V to 10V, and a lower power dissipation.

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2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)

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