用于电力电子应用的增强背障GaN HEMT

2022 5th International Conference on Power Electronics and their Applications (ICPEA) Pub Date : 2022-03-29 DOI:10.1109/icpea51060.2022.9791211

A. Jarndal, L. Arivazhagan, E. A. Majali, S. Mahmoud

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引用次数: 0

摘要

本文研究了一种利用背势垒(BBs)增强GaN HEMT结构的方法，以改善该器件的电热性能。研究了氮化镓(GaN:UID)和氮化镓(AlGaN)等不同的BB材料。采用TCAD物理模型对GaN-HEMT的热特性进行了模拟研究。结果表明，在GaN:UID中，AlGaN势垒具有最佳性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications

In this paper, an enhanced structures of GaN HEMT by means of Back Barriers (BBs) is investigated to improve the electro-thermal behavior of the device for power electronics application. Different materials for the BB including GaN:UID and AlGaN were investigated. TCAD physical model was used to simulate and investigate the thermal characteristics of the GaN-HEMT. The results show an optimal performance with AlGaN barrier with respect to GaN:UID.

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2022 5th International Conference on Power Electronics and their Applications (ICPEA)

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