铅模封装倒装芯片(FLMP)

R. Joshi, R. Manatad, C. Tangpuz
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引用次数: 2

摘要

在半导体工业中,缩小电力电子器件的尺寸一直受到微型表面贴装封装的热性能的限制。该行业的一个关键发展是更高效的硅的可用性,允许更低电阻的芯片(RDS(on))适合更小的封装。然而,新的创新表面贴装封装,如MOSFET BGA封装,结合了微型封装的小形状因素和更大封装的热性能已经开发出来。这些新的封装具有额外的优势,几乎消除了封装阻力。然而,与含铅表面贴装器件相比,涉及BGA外形因素的封装需要不同的处理设备,从而减慢了其采用率。在铅模封装(FLMP)倒装芯片中,这些缺点已经得到解决,保留了微型封装(如MOSFET BGA封装)的优点。该封装的典型特征是,与线键合模相比,模具面积增加了75%,估计/spl θ /jc <0.5/spl度/C/W。由于没有线键,低轮廓(<1.0 mm高度)的封装也可以很容易地构建。此外,包装的结构使其本身成为“无铅”或绿色包装。本文将描述该封装的结构、工艺流程、性能和早期可靠性结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flip chip in leaded molded package (FLMP)
In the semiconductor industry, reducing the size of power electronics has been limited by the thermal performance of miniature surface mount packages. A key development in the industry has been the availability of more efficient silicon, allowing a lower on resistance die (RDS(ON)) to fit in a smaller package. However new innovative surface mount packages such as the MOSFET BGA package which combine the small form factors of miniature packages with the thermal performance of much larger packages have been developed. These new packages have the added advantage of virtually eliminating the package resistance. However packages which involve the BGA form factor require different handling equipment as compared to leaded surface mount devices, slowing their adoption rate. In the flip chip in a leaded molded package (FLMP), these shortcomings have been addressed preserving the advantages of miniature packages such as the MOSFET BGA package. A die up to 75% larger in area as compared to its wire bonded counterpart with estimated /spl theta/jc of <0.5/spl deg/C/W are typical characteristics of this package. Packages of a low profile (<1.0 mm height) can also be easily constructed due to the absence of wire bonds. In addition, the construction of the package lends itself well to a "lead free" or a green package. The paper will describe the construction of the package, the process flow, the performance and early reliability results.
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