微波在含半导体和铁氧体复合结构波导中的传播

P. Gupta, S. Tolpadi
{"title":"微波在含半导体和铁氧体复合结构波导中的传播","authors":"P. Gupta, S. Tolpadi","doi":"10.1109/EUMA.1977.332418","DOIUrl":null,"url":null,"abstract":"In this communication propagation characteristics of a waveguide filled with a composite system of semiconductor and ferrite slab have been investigated. The dispersion relation for the propagation of electromagnetic waves along the interface between a low-loss ferrimagnetic material and a high mobility current carrying semiconductor is obtained. It is shown that the drift carrier stream in the semiconductor including diffusion and collision effects play an important role in the behaviour of space charge waves. There is an interaction between a wave in semiconductor having drift and diffusion effects and a wave in ferrite which gives rise to a growing wave with drifting carrier present in the semiconductor. It is suggested that solid state travelling wave anplifier can be adjacent to ferrite slab.","PeriodicalId":369354,"journal":{"name":"1977 7th European Microwave Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave Propagation in a Waveguide Containing Composite Structure of Semiconductor and Ferrite\",\"authors\":\"P. Gupta, S. Tolpadi\",\"doi\":\"10.1109/EUMA.1977.332418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this communication propagation characteristics of a waveguide filled with a composite system of semiconductor and ferrite slab have been investigated. The dispersion relation for the propagation of electromagnetic waves along the interface between a low-loss ferrimagnetic material and a high mobility current carrying semiconductor is obtained. It is shown that the drift carrier stream in the semiconductor including diffusion and collision effects play an important role in the behaviour of space charge waves. There is an interaction between a wave in semiconductor having drift and diffusion effects and a wave in ferrite which gives rise to a growing wave with drifting carrier present in the semiconductor. It is suggested that solid state travelling wave anplifier can be adjacent to ferrite slab.\",\"PeriodicalId\":369354,\"journal\":{\"name\":\"1977 7th European Microwave Conference\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 7th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1977.332418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 7th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1977.332418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文研究了半导体与铁氧体板复合填充波导的通信传播特性。得到了电磁波沿低损耗铁磁材料与高迁移率载流半导体界面传播的色散关系。结果表明,半导体中包含扩散和碰撞效应的漂移载流子流对空间电荷波的行为起着重要作用。半导体中具有漂移和扩散效应的波与铁氧体中的波之间存在相互作用,后者在半导体中产生具有漂移载流子的生长波。提出固态行波放大器可以与铁氧体板相邻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microwave Propagation in a Waveguide Containing Composite Structure of Semiconductor and Ferrite
In this communication propagation characteristics of a waveguide filled with a composite system of semiconductor and ferrite slab have been investigated. The dispersion relation for the propagation of electromagnetic waves along the interface between a low-loss ferrimagnetic material and a high mobility current carrying semiconductor is obtained. It is shown that the drift carrier stream in the semiconductor including diffusion and collision effects play an important role in the behaviour of space charge waves. There is an interaction between a wave in semiconductor having drift and diffusion effects and a wave in ferrite which gives rise to a growing wave with drifting carrier present in the semiconductor. It is suggested that solid state travelling wave anplifier can be adjacent to ferrite slab.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信