新型双向多指可控硅ESD保护器件的金属布线技术分析

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734540

Du Xiaoyang, Dong Yan, J. Liou

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引用次数: 4

摘要

采用HJTK 0.18-¿m CMOS工艺，实现了一种新型的双向可控硅(DDSCR) ESD保护器件，无需深n阱或t阱掩模。本文研究了多指DDSCR的并联和反并联金属布线方法。结果表明，由于多指DDSCR具有对称的TLP - I-V图特性，在布线设计中金属布线对其性能起着重要作用。

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Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device

A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.

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来源期刊

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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