钝化对选择性生长亚µm锗硅单光子雪崩二极管探测器的影响

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141911

C. Coughlan, M. Mirza, J. Kirdoda, D. Dumas, C. Smith, C. McCarthy, R. Millar, D. Paul

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引用次数: 0

摘要

Ge-on-SOI(绝缘体上硅)单光子雪崩二极管(SPADs)已经被制造出来，其暴露的侧壁允许钝化技术的变化。热氧化钝化降低了暗电流和表面态密度，证明了低长径比选择性生长锗的最佳钝化效果。

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Effect of passivation on selectively grown sub-µm Ge-on-Si single photon avalanche diode detectors

Ge-on-SOI (silicon-on-insulator) single photon avalanche diodes (SPADs) have been fabricated with exposed sidewalls allowing variation of passivation techniques. Reduced dark currents and density of surface states are demonstrated with thermal oxide passivation, demonstrating the benefit of optimal passivation of low aspect ratio selectively grown Ge.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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