ii型超晶格单极势垒红外探测器

2016 IEEE Photonics Conference (IPC) Pub Date : 2016-10-01 DOI:10.1109/IPCON.2016.7831183

D. Ting, A. Soibel, L. Höglund, A. Khoshakhlagh, C. Hill, S. Keo, Sir Rafol, A. Fisher, E. Luong, J. Mumolo, John Liu, B. Pepper, S. Gunapala

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引用次数: 0

摘要

最近材料和器件架构的发展导致了III-V型半导体红外探测器和焦平面阵列的重大进展。我们提供了高性能ii型超晶格基单极势垒红外探测器的概述。

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Type-II superlattice unipolar barrier infrared detectors

Recent material and device architecture development have led to significant advances in III-V semiconductor infrared detectors and focal plane arrays. We provide an overview of high-performance type-II superlattice based unipolar barrier infrared detectors.

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2016 IEEE Photonics Conference (IPC)

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