{"title":"设计双线极化,电小,低轮廓,宽侧辐射,惠更斯源天线","authors":"Zhentian Wu, M. Tang, R. Ziolkowski","doi":"10.1109/IWAT.2018.8379223","DOIUrl":null,"url":null,"abstract":"A design of electrically small, low-profile, dual linearly polarized (LP), Huygens source antenna with high isolation, and broadside radiation patterns with high front forward radiation and low back forward radiation, i.e., high front-to-back ratios (FTBRs), is presented. A prototype dual-LP antenna was fabricated, assembled, and tested. The measured results, in good agreement with their simulated values, confirm that it has an electrically small size (ka=0.904) and low profile (0.0483X0), with port isolation over 25.8 dB within its fractional impedance bandwidth (FBW), 0.46%, where |Sn|< −10 dB. When port 1 (port 2) is excited, the peak realized gain is 2.03 dBi (2.15 dBi) strictly along the broadside direction with the corresponding FTBR being 12.4 dB (12.1 dB).","PeriodicalId":212550,"journal":{"name":"2018 International Workshop on Antenna Technology (iWAT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of dual linearly polarized, electrically small, low-profile, broadside radiating, Huygens source antenna\",\"authors\":\"Zhentian Wu, M. Tang, R. Ziolkowski\",\"doi\":\"10.1109/IWAT.2018.8379223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A design of electrically small, low-profile, dual linearly polarized (LP), Huygens source antenna with high isolation, and broadside radiation patterns with high front forward radiation and low back forward radiation, i.e., high front-to-back ratios (FTBRs), is presented. A prototype dual-LP antenna was fabricated, assembled, and tested. The measured results, in good agreement with their simulated values, confirm that it has an electrically small size (ka=0.904) and low profile (0.0483X0), with port isolation over 25.8 dB within its fractional impedance bandwidth (FBW), 0.46%, where |Sn|< −10 dB. When port 1 (port 2) is excited, the peak realized gain is 2.03 dBi (2.15 dBi) strictly along the broadside direction with the corresponding FTBR being 12.4 dB (12.1 dB).\",\"PeriodicalId\":212550,\"journal\":{\"name\":\"2018 International Workshop on Antenna Technology (iWAT)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Workshop on Antenna Technology (iWAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWAT.2018.8379223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Workshop on Antenna Technology (iWAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAT.2018.8379223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
提出了一种电小、低轮廓、双线极化(LP)、惠更斯源天线的设计,具有高前向辐射和低后向辐射的宽侧辐射模式,即高前后比(FTBRs)。制作、组装和测试了一个原型双lp天线。测量结果与模拟值吻合良好,证实其具有电尺寸小(ka=0.904)和低轮廓(0.0483X0),在其分数阻抗带宽(FBW)内,端口隔离超过25.8 dB,为0.46%,其中|Sn|<−10 dB。当端口1(端口2)被激励时,严格沿宽方向的峰值实现增益为2.03 dBi (2.15 dBi),相应的FTBR为12.4 dB (12.1 dB)。
A design of electrically small, low-profile, dual linearly polarized (LP), Huygens source antenna with high isolation, and broadside radiation patterns with high front forward radiation and low back forward radiation, i.e., high front-to-back ratios (FTBRs), is presented. A prototype dual-LP antenna was fabricated, assembled, and tested. The measured results, in good agreement with their simulated values, confirm that it has an electrically small size (ka=0.904) and low profile (0.0483X0), with port isolation over 25.8 dB within its fractional impedance bandwidth (FBW), 0.46%, where |Sn|< −10 dB. When port 1 (port 2) is excited, the peak realized gain is 2.03 dBi (2.15 dBi) strictly along the broadside direction with the corresponding FTBR being 12.4 dB (12.1 dB).