绝缘子上的中红外氮化铝(AlNOI)平台

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/group4.2019.8925822

B. Dong, Xianshu Luo, Li Huang, P. Lo, K. Ang, D. Kwong, Chengkuo Lee

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引用次数: 0

摘要

本文报道了绝缘子上的中红外氮化铝(AlNOI)平台。利用拉曼光谱、红外光谱和x射线衍射光谱研究了AlNOI平台的材料性能。对单模波导器件的传输损耗、弯曲损耗、锥度耦合效率进行了表征。该平台可以补充硅光子学在中红外领域的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mid-Infrared Aluminum Nitride on Insulator (AlNOI) Platform

We report mid-infrared aluminum nitride on insulator (AlNOI) platform. The material properties of the AlNOI platform are studied by Raman, FTIR, and XRD spectroscopy. Propagation loss, bending loss, taper coupling efficiency are characterized by single-mode waveguide devices. This platform can complement silicon photonics in the mid-infrared.

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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