基于TCAD和SPICE的未来缩放3D NAND闪存特性预测

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782927

Minsoo Kim, Hyungcheol Shin

{"title":"基于TCAD和SPICE的未来缩放3D NAND闪存特性预测","authors":"Minsoo Kim, Hyungcheol Shin","doi":"10.23919/SNW.2019.8782927","DOIUrl":null,"url":null,"abstract":"In this work, we predicted the characteristics of 3D NAND Flash for lateral and vertical scaling by using simulation tools such as TCAD and SPICE. We fitted our SPICE models to TCAD results, and then we developed a model which predicts the on-current $(\\mathrm{I}_{on})$, threshold voltage $(\\mathrm{V}_{mathrm{th}})$, and subthreshold swing (S.S.) with according to lateral scaling. We also analyzed the program efficiency with scaling the thickness of tunneling oxide by using SPICE. Finally, we predicted Ion with increasing number of word-line layers.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Prediction of Characteristics of Future Scaled 3D NAND Flash Memory by Using TCAD and SPICE\",\"authors\":\"Minsoo Kim, Hyungcheol Shin\",\"doi\":\"10.23919/SNW.2019.8782927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we predicted the characteristics of 3D NAND Flash for lateral and vertical scaling by using simulation tools such as TCAD and SPICE. We fitted our SPICE models to TCAD results, and then we developed a model which predicts the on-current $(\\\\mathrm{I}_{on})$, threshold voltage $(\\\\mathrm{V}_{mathrm{th}})$, and subthreshold swing (S.S.) with according to lateral scaling. We also analyzed the program efficiency with scaling the thickness of tunneling oxide by using SPICE. Finally, we predicted Ion with increasing number of word-line layers.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"149 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这项工作中，我们通过TCAD和SPICE等仿真工具预测了3D NAND闪存的横向和纵向缩放特性。我们将SPICE模型拟合到TCAD结果中，然后建立了一个模型，根据横向标度预测导通电流$(\mathrm{I}_{on})$、阈值电压$(\mathrm{V}_{mathrm{th}})$和亚阈值摆幅(S.S.)。本文还分析了应用SPICE对隧道氧化层厚度进行缩放的程序效率。最后，我们预测了随着字行层数的增加而增加的离子。

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Prediction of Characteristics of Future Scaled 3D NAND Flash Memory by Using TCAD and SPICE

In this work, we predicted the characteristics of 3D NAND Flash for lateral and vertical scaling by using simulation tools such as TCAD and SPICE. We fitted our SPICE models to TCAD results, and then we developed a model which predicts the on-current $(\mathrm{I}_{on})$, threshold voltage $(\mathrm{V}_{mathrm{th}})$, and subthreshold swing (S.S.) with according to lateral scaling. We also analyzed the program efficiency with scaling the thickness of tunneling oxide by using SPICE. Finally, we predicted Ion with increasing number of word-line layers.

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2019 Silicon Nanoelectronics Workshop (SNW)

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