新型紧凑的感应栅电流噪声模型[MOSFET]

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269416

R. Van Langevelde, J. Paasschens, A. Scholten, R. Havens, L. Tiemeijer, D. Klaassen

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引用次数: 25

摘要

精确紧凑的感应门噪声建模是射频CMOS电路设计的先决条件。现有模型低估了短通道器件的感应栅极噪声。本文介绍了一种基于改进Klaassen-Prins方法的新模型，该模型可以准确地计算速度饱和度。该模型无需拟合任何附加参数即可准确地描述噪声。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New compact model for induced gate current noise [MOSFET]

Accurate compact modeling of induced gate noise is a prerequisite for RF CMOS circuit design. Existing models underestimate the induced gate noise for short-channel devices. In this paper, a new model is introduced, based on an improved Klaassen-Prins approach, which accurately accounts for velocity saturation. The model accurately describes noise without fitting any additional parameters.

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IEEE International Electron Devices Meeting 2003

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