选择性臭氧/TEOS沉积气隙技术

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345723

Z. Gabric, W. Pamler, G. Schindler, W. Steinhogl, M. Traving

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引用次数: 6

摘要

提出了一种基于臭氧/TEOS选择性沉积氧化物的气隙制备技术。由于该工艺具有各向同性的生长方向，因此可以避免非共形CVD工艺中常见方法的一些缺点。研究表明，与没有气隙的完整结构相比，气隙技术有可能将相邻金属线之间的电容减少大约2倍。

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Air gap technology by selective ozone/TEOS deposition

A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes can be avoided. It is demonstrated that air gap technology has the potential to reduce the capacitance between adjacent metal lines roughly by a factor of 2 compared to full structures without air gaps.

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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