DL-RSIM:为深度学习提供可靠的基于reram的加速器的仿真框架

Meng-Yao Lin, Hsiang-Yun Cheng, Wei-Ting Lin, Tzu-Hsien Yang, I-Ching Tseng, Chia-Lin Yang, Han-Wen Hu, Hung-Sheng Chang, Hsiang-Pang Li, Meng-Fan Chang
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引用次数: 54

摘要

然而,忆阻器的电学特性和横条结构使这些加速器容易出错。为了实现可靠的忆阻器加速器,需要一个仿真平台来精确分析非理想电路和器件特性对推理精度的影响。在本文中,我们提出了一个灵活的仿真框架,DL-RSIM,以解决这一挑战。DL-RSIM模拟了基于忆阻器的加速器中每个乘积和计算的错误率,并将错误率注入到目标的基于tensorflow的神经网络模型中。DL-RSIM探索了一组丰富的可靠性影响因子,它可以与任何由TensorFlow实现的深度学习神经网络相结合。以三个代表性的卷积神经网络为例,我们表明DL-RSIM可以指导芯片设计人员选择可靠性友好的设计方案并开发可靠性优化技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DL-RSIM: A Simulation Framework to Enable Reliable ReRAM-based Accelerators for Deep Learning
Memristor-based deep learning accelerators provide a promising solution to improve the energy efficiency of neuromorphic computing systems. However, the electrical properties and crossbar structure of memristors make these accelerators error-prone. To enable reliable memristor-based accelerators, a simulation platform is needed to precisely analyze the impact of non-ideal circuit and device properties on the inference accuracy. In this paper, we propose a flexible simulation framework, DL-RSIM, to tackle this challenge. DL-RSIM simulates the error rates of every sum-of-products computation in the memristor-based accelerator and injects the errors in the targeted TensorFlow-based neural network model. A rich set of reliability impact factors are explored by DL-RSIM, and it can be incorporated with any deep learning neural network implemented by TensorFlow. Using three representative convolutional neural networks as case studies, we show that DL-RSIM can guide chip designers to choose a reliability-friendly design option and develop reliability optimization techniques.
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