光伏应用的微波近场探测器

J. Weber, K. Bertness, J. Schlager, N. Sanford, A. Imtiaz, T. M. Wallis, P. Kabos, K. Coakley, V. Bright, L. Mansfield
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引用次数: 0

摘要

利用近场扫描微波显微镜(NSMM)测量了三种不同光伏Cu(In, Ga)Se2 (CIGS)样品以及GaAs和硅体样品的光响应。建模预测了大量样品的光相关电导率值,以及对更复杂的多层光伏电池的初步理解。在405、635、808和980 nm波长处探测了CIGS样品的光谱依赖性。此外,我们提出了二维光栅扫描,可以揭示在照明下的晶界效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microwave near-field probes for photovoltaic applications
The photoresponse of three different photovoltaic Cu(In, Ga)Se2 (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.
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