Yanrong Song, P. Zhang, J. Tian, Zhigang Zhang, H. Tan, C. Jagadish
{"title":"高重复频率锁模半导体光盘激光器","authors":"Yanrong Song, P. Zhang, J. Tian, Zhigang Zhang, H. Tan, C. Jagadish","doi":"10.5220/0004022903610364","DOIUrl":null,"url":null,"abstract":"A compact passively mode-locked semiconductor disk laser with a high repetition frequency of 3GHz is demonstrated. 4.9ps pulse duration and 30mW average output power are obtained with 1.4W of 808nm incident pump power. The gain chip consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region.","PeriodicalId":194465,"journal":{"name":"DCNET/ICE-B/OPTICS","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Repetition Frequency Mode-locked Semiconductor Disk Laser\",\"authors\":\"Yanrong Song, P. Zhang, J. Tian, Zhigang Zhang, H. Tan, C. Jagadish\",\"doi\":\"10.5220/0004022903610364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact passively mode-locked semiconductor disk laser with a high repetition frequency of 3GHz is demonstrated. 4.9ps pulse duration and 30mW average output power are obtained with 1.4W of 808nm incident pump power. The gain chip consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region.\",\"PeriodicalId\":194465,\"journal\":{\"name\":\"DCNET/ICE-B/OPTICS\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DCNET/ICE-B/OPTICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5220/0004022903610364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DCNET/ICE-B/OPTICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5220/0004022903610364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Repetition Frequency Mode-locked Semiconductor Disk Laser
A compact passively mode-locked semiconductor disk laser with a high repetition frequency of 3GHz is demonstrated. 4.9ps pulse duration and 30mW average output power are obtained with 1.4W of 808nm incident pump power. The gain chip consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region.