采用低成本、高体积的0.15 um光刻pHEMT工艺的40ghz功率放大器

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems Pub Date : 2009-11-01 DOI:10.1109/COMCAS.2009.5385967

Kenneth W. Mays

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引用次数: 1

摘要

采用0.15 um光刻pHEMT工艺实现了40ghz功率放大器，该工艺适用于低成本微波和毫米波电路。几个Ka和V波段的市场需求推动了对更高带宽、低成本集成电路的需求。从最初的设计阶段到固态功率放大器的制造和测量，使用了一个40 GHz功率放大器来演示工艺能力。

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A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process

A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.

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来源期刊

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems

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