{"title":"考虑温度效应的亚微米双材料栅极gamesfet分析模型","authors":"N. Lakhdar, B. Lakehal","doi":"10.1109/GECS.2017.8066258","DOIUrl":null,"url":null,"abstract":"In this paper, a temperature dependent analytical model of submicron Dual Material gate (DM) Gallium Nitride (GaN) MESFET suitable for high power applications is described. The model takes into account the effect of various temperature dependent device parameters in order to develop an accurate current-voltage model of the device under various high temperature (300K-500K) conditions. The model is then extended to evaluate the temperature dependence of transconductance and output conductance. The obtained results have been verified by its good agreement with 2D numerical simulations.","PeriodicalId":214657,"journal":{"name":"2017 International Conference on Green Energy Conversion Systems (GECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An analytical model for submicron dual material gate GaNMESFET including the temperature effects\",\"authors\":\"N. Lakhdar, B. Lakehal\",\"doi\":\"10.1109/GECS.2017.8066258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a temperature dependent analytical model of submicron Dual Material gate (DM) Gallium Nitride (GaN) MESFET suitable for high power applications is described. The model takes into account the effect of various temperature dependent device parameters in order to develop an accurate current-voltage model of the device under various high temperature (300K-500K) conditions. The model is then extended to evaluate the temperature dependence of transconductance and output conductance. The obtained results have been verified by its good agreement with 2D numerical simulations.\",\"PeriodicalId\":214657,\"journal\":{\"name\":\"2017 International Conference on Green Energy Conversion Systems (GECS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Green Energy Conversion Systems (GECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GECS.2017.8066258\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Green Energy Conversion Systems (GECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GECS.2017.8066258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical model for submicron dual material gate GaNMESFET including the temperature effects
In this paper, a temperature dependent analytical model of submicron Dual Material gate (DM) Gallium Nitride (GaN) MESFET suitable for high power applications is described. The model takes into account the effect of various temperature dependent device parameters in order to develop an accurate current-voltage model of the device under various high temperature (300K-500K) conditions. The model is then extended to evaluate the temperature dependence of transconductance and output conductance. The obtained results have been verified by its good agreement with 2D numerical simulations.
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