{"title":"mosfet在高剂量率辐射环境中的应用","authors":"R. Severns, R. Blanchard","doi":"10.1109/APEC.1986.7073304","DOIUrl":null,"url":null,"abstract":"In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device's structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.","PeriodicalId":302790,"journal":{"name":"1986 IEEE Applied Power Electronics Conference and Exposition","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The use of MOSFETS in high-dose-rate radiation environments\",\"authors\":\"R. Severns, R. Blanchard\",\"doi\":\"10.1109/APEC.1986.7073304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device's structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.\",\"PeriodicalId\":302790,\"journal\":{\"name\":\"1986 IEEE Applied Power Electronics Conference and Exposition\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE Applied Power Electronics Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1986.7073304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE Applied Power Electronics Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1986.7073304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The use of MOSFETS in high-dose-rate radiation environments
In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device's structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.
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