硅平台上的GaAs纳米结构

2015 Opto-Electronics and Communications Conference (OECC) Pub Date : 2015-12-03 DOI:10.1109/OECC.2015.7340229

S. Sanguinetti, S. Bietti, D. Scarpellini, A. Ballabio, L. Miglio, G. Isella, L. Esposito, J. Frigerio, A. Fedorov, M. Gurioli, F. Biccari, M. Abbarchi, A. Vinattieri

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引用次数: 0

摘要

将介绍在硅上制造高质量量子III-V纳米结构的有效单片集成策略。提出的方法包括超薄平面锗虚拟衬底，用于集成具有高温稳定性的单光子发射器，以及先进的三维锗生长策略。

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GaAs nanostructures on Si platform

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

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2015 Opto-Electronics and Communications Conference (OECC)

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