采用半导体分布掺杂区域的具有高隔离衰减功能的全集成带通滤波器

Corentin Le Lez, R. Allanic, D. L. Berre, C. Quendo, Rose-Marie Sauvage, A. Leuliet, T. Merlet, Douglas Silva de Vasconcellos, V. Grimal, D. Valente, J. Billoué
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引用次数: 0

摘要

本文提出了一种集成衰减器特性的四分之一波长耦合线x波段带通滤波器。高抑制模拟衰减器采用硅衬底上集成的半导体分布掺杂区(ScDDAs)作为可调谐电阻。测量的插入损耗为2.8 dB,衰减范围为42 dB,可以精确控制高度集成系统的发射功率。为了提高分布式半导体器件的设计精度,在回溯仿真中提出了一种耦合的半导体物理和电磁结构仿真框架。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully Integrated Bandpass Filter with High Isolation Attenuator Function Using Semi-conductor Distributed Doped Areas
In this paper, a quarter wavelength coupled lines X-band bandpass filter (BPF) integrating an attenuator feature is presented. The high rejection analog attenuator uses integrated Semiconductor Distributed Doped Areas (ScDDAs) on silicon substrate as tunable resistors. The measured insertion loss of 2.8 dB and attenuation range of 42 dB allow a precise control of the transmitted power for highly integrated systems. A coupled semiconductor physics and electromagnetic structure simulation framework is also proposed in retro-simulations to improve design accuracy of distributed semiconductor devices.
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