SOI槽波导环形谐振器损耗机理研究

2015 Opto-Electronics and Communications Conference (OECC) Pub Date : 2015-12-03 DOI:10.1109/OECC.2015.7340165

Weiwei Zhang, S. Serna, X. Le roux, L. Vivien, E. Cassan

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引用次数: 0

摘要

通过对加降环形谐振器和环形增强马赫-曾德尔干涉仪的表征，实验分析了基于直母线环形定向耦合器的槽环形谐振器的损耗机理。证明了耦合器是主要的寄生损耗，从而为改进槽波导微环谐振器进行强光-物质相互作用提供了有趣的方向。

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Investigation of loss mechanism of SOI slot waveguide ring resonators

Loss mechanism of slot ring resonators based on straight bus-ring directional couplers is experimentally analyzed by characterizing add-drop ring resonators and ring enhanced Mach-Zehnder interferometers. The coupler is proved to be the main parasitic loss, thus giving interesting directions to improve slot waveguide micro-ring resonators for strong light-matter interactions.

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来源期刊

2015 Opto-Electronics and Communications Conference (OECC)

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