{"title":"采用n型InGaAs/GaAs量子阱的正入射子带间红外探测器","authors":"G. Karunasiri, R. Shih, J. Chen","doi":"10.1109/DRC.1995.496296","DOIUrl":null,"url":null,"abstract":"Recently, normal incident intersubband absorption has been observed using InGaAs based quantum well structures. In this abstract, we report the first demonstration of a normal incident infrared detector using n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells\",\"authors\":\"G. Karunasiri, R. Shih, J. Chen\",\"doi\":\"10.1109/DRC.1995.496296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, normal incident intersubband absorption has been observed using InGaAs based quantum well structures. In this abstract, we report the first demonstration of a normal incident infrared detector using n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
Recently, normal incident intersubband absorption has been observed using InGaAs based quantum well structures. In this abstract, we report the first demonstration of a normal incident infrared detector using n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells.
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