{"title":"采用新颖的inGaAs/inALAs pHEMT设计的低噪声差分放大器，用于无线应用","authors":"N. Ahmad, M. Muhamad, C. Wooi, M. Isa","doi":"10.1109/ISCAIE.2017.8074953","DOIUrl":null,"url":null,"abstract":"This paper discusses on the differential LNA design on Pseudomorphic High-electron-mobility transistor (pHEMT) based technology for wireless application, and the standard 1μm pHEMT is implemented throughout the design. The LNA design has been completed with two stages, with the purpose of successfully enhance the gain and noise performance. The proposed LNA design has the functionality of application for 26 ± 4 dB gains with noise figure that is less than 1.5 dB. The input return losses (S11) of −13.59 dB and power consumption of 124 mW are provided in this paper. The interested frequency range from 0.4 until 2 GHz is allocated in L band, hence making the design unconditionally stable within the desired frequency range.","PeriodicalId":298950,"journal":{"name":"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low noise differential amplifier design using novel inGaAs/inALAs pHEMT for wireless applications\",\"authors\":\"N. Ahmad, M. Muhamad, C. Wooi, M. Isa\",\"doi\":\"10.1109/ISCAIE.2017.8074953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses on the differential LNA design on Pseudomorphic High-electron-mobility transistor (pHEMT) based technology for wireless application, and the standard 1μm pHEMT is implemented throughout the design. The LNA design has been completed with two stages, with the purpose of successfully enhance the gain and noise performance. The proposed LNA design has the functionality of application for 26 ± 4 dB gains with noise figure that is less than 1.5 dB. The input return losses (S11) of −13.59 dB and power consumption of 124 mW are provided in this paper. The interested frequency range from 0.4 until 2 GHz is allocated in L band, hence making the design unconditionally stable within the desired frequency range.\",\"PeriodicalId\":298950,\"journal\":{\"name\":\"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAIE.2017.8074953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAIE.2017.8074953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise differential amplifier design using novel inGaAs/inALAs pHEMT for wireless applications
This paper discusses on the differential LNA design on Pseudomorphic High-electron-mobility transistor (pHEMT) based technology for wireless application, and the standard 1μm pHEMT is implemented throughout the design. The LNA design has been completed with two stages, with the purpose of successfully enhance the gain and noise performance. The proposed LNA design has the functionality of application for 26 ± 4 dB gains with noise figure that is less than 1.5 dB. The input return losses (S11) of −13.59 dB and power consumption of 124 mW are provided in this paper. The interested frequency range from 0.4 until 2 GHz is allocated in L band, hence making the design unconditionally stable within the desired frequency range.
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