高频磁通控制接地忆阻器仿真器

2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE) Pub Date : 2022-10-18 DOI:10.1109/ICITEE56407.2022.9954099

Pankaj Kumar Sharma, Prashant Kumar, R. Ranjan

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引用次数: 0

摘要

在本文中，我们提出了一个基于CCII和VDIBA模块的接地忆阻器仿真器模型。所提出的电路还使用一个电阻和一个电容以及模拟构建块。所提出的忆阻器仿真器工作频率高达25 MHz。利用Cadence Virtuoso 180nm CMOS参数对所提出的忆阻器进行了仿真。所提出的忆阻器工作电压为±0.9 V，功耗为2.4 mW。通过将忆阻器并联连接，测试了忆阻器仿真器在电路实现过程中的适应性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A High-Frequency Flux Controlled Grounded Memristor Emulator

In this article, we have proposed a grounded memristor emulator model using CCII and VDIBA blocks. The proposed circuit also uses one resistor and one capacitor along with analog building blocks. The presented memristor emulator operates up to 25 MHz. The proposed memristor is simulated using Cadence Virtuoso 180 nm CMOS parameter. The proposed memristor works at ± 0.9 V and the power consumption is 2.4 mW. The adaptability of the memristor emulator during circuit implementation is tested by connecting the memristors in parallel.

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2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)

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