{"title":"MOS电容器","authors":"","doi":"10.1017/9781108847087.007","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":164114,"journal":{"name":"Fundamentals of Modern VLSI Devices","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOS Capacitors\",\"authors\":\"\",\"doi\":\"10.1017/9781108847087.007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":164114,\"journal\":{\"name\":\"Fundamentals of Modern VLSI Devices\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fundamentals of Modern VLSI Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1017/9781108847087.007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fundamentals of Modern VLSI Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1017/9781108847087.007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}