高阻硅衬底上AlGaN/GaN hemt的微波噪声特性

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598891

Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan

{"title":"高阻硅衬底上AlGaN/GaN hemt的微波噪声特性","authors":"Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan","doi":"10.1109/RFIT.2005.1598891","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate\",\"authors\":\"Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan\",\"doi\":\"10.1109/RFIT.2005.1598891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.\",\"PeriodicalId\":337918,\"journal\":{\"name\":\"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2005.1598891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在高阻硅衬底上成功制备了栅极长度分别为0.8-/spl mu/m和0.3 /spl mu/m的AlGaN/GaN高电子迁移率晶体管。对于0.8-/spl mu/m和0.3-/spl mu/m门长器件，截止频率f/sub / T/分别为7 GHz和22 GHz，最大振荡频率f/sub / max/分别为23 GHz和40 GHz。在0.3-/spl mu/m栅极长度器件中，在10 GHz频率下，最小噪声系数(NF/sub min/)为2.0 dB，相关增益(G/sub ass/)为10.3 dB。这显示了AlGaN/GaN hemt在高电阻率Si上用于低成本低噪声放大器的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

自引率

0.00%

发文量