基于碳纳米管场效应晶体管的三元D锁存器设计

Sutaria Jimmy, S. Narkhede
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引用次数: 6

摘要

本文提出了一种利用碳纳米管场效应晶体管设计三元d锁存器的新方法。三元逻辑是传统二进制逻辑设计技术的一个很有前途的替代方案,因为它可以在现代数字设计中实现简单和节能,因为它减少了电路开销,如互连和芯片面积。本文提出了一种新颖的基于CNTFET的三元逻辑d锁存器设计,仅使用基本门STI、NTI、NOR、NAND和传输门。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of ternary D latch using carbon nanotube field effect transistors
This paper presents a novel design of ternary D-latch using carbon nanotube field effect transistors. Ternary logic is a promising alternative to the conventional binary logic design technique, since it is possible to accomplish simplicity and energy efficiency in modern digital design due to the reduced circuit overhead such as interconnects and chip area. In this paper novel design of D-latch for ternary logic based on CNTFET, using only basic gates STI, NTI, NOR, NAND and transmission gate, is proposed.
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