{"title":"在光通信波长发射的InAlN纳米柱的生长和性质","authors":"J. Kamimura, K. Kishino, A. Kikuchi","doi":"10.1109/INOW.2008.4634571","DOIUrl":null,"url":null,"abstract":"In<sub>x</sub>Al<sub>1-x</sub>N nanocolumns (0.71lesx<sub>In</sub>les1.00) were fabricated on Si (111) substrates by RF-MBE. The room temperature photoluminescence (RT-PL) in optical communication wavelengths from 0.95 to 1.94 mum with changing x<sub>In</sub> was observed. InN/InAlN heterostructures were also fabricated.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and properties of InAlN nanocolumns emitting in optical communication wavelengths\",\"authors\":\"J. Kamimura, K. Kishino, A. Kikuchi\",\"doi\":\"10.1109/INOW.2008.4634571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In<sub>x</sub>Al<sub>1-x</sub>N nanocolumns (0.71lesx<sub>In</sub>les1.00) were fabricated on Si (111) substrates by RF-MBE. The room temperature photoluminescence (RT-PL) in optical communication wavelengths from 0.95 to 1.94 mum with changing x<sub>In</sub> was observed. InN/InAlN heterostructures were also fabricated.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and properties of InAlN nanocolumns emitting in optical communication wavelengths
InxAl1-xN nanocolumns (0.71lesxInles1.00) were fabricated on Si (111) substrates by RF-MBE. The room temperature photoluminescence (RT-PL) in optical communication wavelengths from 0.95 to 1.94 mum with changing xIn was observed. InN/InAlN heterostructures were also fabricated.
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