亚阈值区高k介电介质对绝热逻辑电路性能的影响

Savio Jay Sengupta, Samarthi Chakraborty, Tamal Sarkar, Md. Zishan Iqbal, M. Chanda
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引用次数: 1

摘要

绝热逻辑方式对于低功耗数字系统的设计和实现是有效的,并且降低了电路延迟。本文深入分析了超低功耗应用中,高K栅介电介质对亚阈值状态下绝热逻辑电路的功耗和时延的影响。因此,采用高效能亚阈值绝热逻辑(EESAL)作为参考电路。此外,对具有不同栅介电介质的绝热逻辑电路,建立了分析温度、电源电压、容性负载和频率影响的解析模型。大量的SPICE模拟已经完成,以验证分析数据。分析结果对低功耗栅极应用中栅极材料的选择具有指导意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of High-K Dielectric on the Performances of Adiabatic Logic Circuits in Sub-Threshold Regime
Adiabatic logic style is efficient for the design and implementation of the low power, digital system, with reduced circuit delay. In this paper, effect of high K gate dielectric on the power dissipation and delay of the adiabatic logic circuits in sub-threshold regime for ultra-low power applications have been analysed in depth. Hence Energy Efficient Sub-Threshold Adiabatic Logic (EESAL)has been adopted as reference circuit. Besides, analytic models have been detailed to analyse the impact of temperature, supply voltage, capacitive load and frequency have been detailed for adiabatic logic circuits having different gate dielectric. Extensive SPICE simulations have been done to validate the analytical data. The analysis would be efficacious to choose the selective gate materials for the applications in the low power regime.
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