全钝化超低噪声w波段单片InGaAs/InAlAs/InP HEMT放大器

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470990

G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz

{"title":"全钝化超低噪声w波段单片InGaAs/InAlAs/InP HEMT放大器","authors":"G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz","doi":"10.1109/MCS.1995.470990","DOIUrl":null,"url":null,"abstract":"A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier\",\"authors\":\"G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz\",\"doi\":\"10.1109/MCS.1995.470990\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470990\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

基于InGaAs/InAlAs/InP HEMT MMIC技术，研制了一种w波段3级单片低噪声放大器。晶圆钝化和稳定烘烤首次被引入到MMIC工艺中，使其更适合生产。在94 GHz时，最小噪声系数为3.3 dB，相关增益为20 dB，代表了迄今为止在w频段工作的任何钝化多级MMIC LNA的最佳性能。

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A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier

A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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