用于微阵列衬底的硅纳米线的形态结构和光学特性

2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI:10.1109/CAS52836.2021.9604193

M. Popescu, I. Mihalache, C. Romanițan, M. Popescu, L. Gogianu, M. Simion

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引用次数: 0

摘要

硅(Si)的一步金属辅助化学蚀刻(1-MACE)得到了垂直硅纳米线(SiNWs)。场发射扫描电镜(FE-SEM)显示出长度约为6、8和10 μm的SiNWs。高分辨率x射线衍射(XRD)显示单晶Si(001)的形成。光致发光测量显示，其中一个样品具有四个发射峰的宽光谱带。

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Morpho-structural and optical characterization of silicon nanowires intended for microarray substrates

One-step metal assisted chemical etching (1-MACE) of silicon (Si) resulted in vertical silicon nanowires (SiNWs). Field emission scanning electron microscopy (FE-SEM) revealed SiNWs with lengths around 6, 8 and 10 μm. High resolution X-Ray Diffraction (XRD) showed the formation of monocrystalline Si (001). Photoluminescence measurements disclosed a broad spectral band on one of the samples with four emission peaks.

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2021 International Semiconductor Conference (CAS)

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