三维圆片级封装TGV玻璃回流工艺的理论模型与实验

Yunbin Kuang, D. Xiao, Jian Zhou, Wenyin Li, Z. Hou, H. Cui, Xuezhong Wu
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引用次数: 2

摘要

TGV (Through Glass Via)基板在晶圆级真空封装中起着重要的作用。而玻璃回流是制造TGV的关键步骤。为了描述这一过程,通过流体方程和电路方程的类比推导出理论公式。理论模型中包含了玻璃回流过程的参数,如一定宽度模具的热处理时间和温度等,这些参数对回流速度有显著影响。仿真结果与理论结果相吻合。此外,在湿法蚀刻、激光燃烧和DRIE三种制造工艺中,理论公式显示了为玻璃回流工艺提供参数的可行性。最后,通过密封陀螺仪进行了密封封装实验,测得Q因子为9119,验证了TGV基板用于晶圆级密封封装的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical model and experiments of glass reflow process in TGV for 3D wafer-level packaging
TGV (Through Glass Via) substrate plays an important role in wafer-level vacuum packaging. And glass reflow is the critical step of fabricating TGV. To describe the process, the theoretical formula was deduced through the analogy of fluid equation and circuit equation. Parameters of glass reflow process, such as heating treatment time and temperature for a certain width mold et al. were comprised in theoretical model, which significantly influence the reflow speed. Simulations were conducted and compatible to the theoretical results. Moreover, in all the three types of fabricating process including wet etching, laser burning and DRIE, the theoretical formula shows the feasibility for providing parameters for glass reflow process. Finally, hermetic packaging experiments were performed by sealing a gyroscope, and the Q factor measured was 9119, which indicates the feasibility of the TGV substrate for wafer-level hermetic packaging.
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