一种测量晶体管动态导通电阻的新型电压箝位电路

R. Gelagaev, P. Jacqmaer, J. Everts, J. Driesen
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引用次数: 9

摘要

为了确定功率晶体管的动态导通电阻Rdyn,必须在开关操作期间测量电压和电流波形。在使用示波器测量电压波形时,如果测量通道的范围不够宽,无法同时测量通断电压,则示波器内部放大器的特性会发生畸变,导致无法准确测量电压波形。提出了一种提高晶体管导通电压测量精度的新型电压钳位电路。通过将晶体管上的关断电压箝位到仍然大于导通电压的较低电压,提高了测量精度。与传统箝位电路不同,本文提出的电压箝位电路不会引入由RC时间常数引起的延迟,即使在被评估半导体器件的状态转换期间,频率高达1MHz,也能保持电压波形清晰。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance
For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when the range of the measurement channel is not set wide enough to measure both on-state and off-state voltage, resulting in failure to accurately measure the voltage waveforms. A novel voltage clamp circuit improving the accuracy of the transistor on-state voltage measurement is presented. The measurement accuracy is improved by clamping the off-state voltage across the transistor to a lower voltage that is still greater than the on-state voltage. Unlike traditional clamping circuit, the presented voltage clamp circuit does not introduce delay caused by RC time constants keeping the voltage waveform clear even during state transitions of the evaluated semiconductor device for frequencies up to 1MHz.
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