新一代功率半导体:1200V IGBT4和EmCon4二极管

2006 India International Conference on Power Electronics Pub Date : 2006-12-01 DOI:10.1109/IICPE.2006.4685345

A. Volke, M. Baessler, F. Umbach, F. Hille, W. Rusche, M. Hornkamp

{"title":"新一代功率半导体:1200V IGBT4和EmCon4二极管","authors":"A. Volke, M. Baessler, F. Umbach, F. Hille, W. Rusche, M. Hornkamp","doi":"10.1109/IICPE.2006.4685345","DOIUrl":null,"url":null,"abstract":"This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and thermal performance discussed in detail.","PeriodicalId":227812,"journal":{"name":"2006 India International Conference on Power Electronics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"The new power semiconductor generation: 1200V IGBT4 and EmCon4 Diode\",\"authors\":\"A. Volke, M. Baessler, F. Umbach, F. Hille, W. Rusche, M. Hornkamp\",\"doi\":\"10.1109/IICPE.2006.4685345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and thermal performance discussed in detail.\",\"PeriodicalId\":227812,\"journal\":{\"name\":\"2006 India International Conference on Power Electronics\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 India International Conference on Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IICPE.2006.4685345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 India International Conference on Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICPE.2006.4685345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

介绍了英飞凌最新的1200v功率半导体产品:IGBT4和EmCon4二极管。新技术系列针对低、中、高三种不同功率水平的应用进行了优化。每个部分在动态和静态损耗、开关频率和柔软度方面都得到了相应的平衡。本文介绍了这种新工艺，并对其电学和热学性能进行了详细的讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The new power semiconductor generation: 1200V IGBT4 and EmCon4 Diode

This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and thermal performance discussed in detail.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 India International Conference on Power Electronics

自引率

0.00%

发文量