{"title":"利用天然氧化物横向约束层改善单模激光器的性能","authors":"J. Heerlein, M. Grabherr, R. Jager, P. Unger","doi":"10.1109/LEOSST.1997.619197","DOIUrl":null,"url":null,"abstract":"We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved performance of single-mode lasers by using native-oxide lateral-confinement layers\",\"authors\":\"J. Heerlein, M. Grabherr, R. Jager, P. Unger\",\"doi\":\"10.1109/LEOSST.1997.619197\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619197\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved performance of single-mode lasers by using native-oxide lateral-confinement layers
We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.
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