Effect of the precursor solution concentration of Copper (I) Iodide (CuI) thin film deposited by mister atomizer method

This research focuses on the effect of precursor concentration of CuI thin film deposited by mister atomizer. The wide band gap p-type semiconductor (3.1eV) of CuI thin film was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.05M to 0.5M. The argon gas was used as a carrier gas with constant flow rate of 10ml/min for 5 minutes for the CuI deposition. The substrate temperature was fixed at 100°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. The surface morphology characterized by FESEM shows a uniform thin film using this deposition technique. The resistivity of about 103Ω cm and absorption coefficient of 106 m−1 is observed in those CuI thin films.