红外探测用超掺硅薄膜

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI:10.1117/12.2648363

J. Mathews

{"title":"红外探测用超掺硅薄膜","authors":"J. Mathews","doi":"10.1117/12.2648363","DOIUrl":null,"url":null,"abstract":"Hyperdoped Si materials extend Si response range into near infrared by forming intermediate band in Si band gap. Ti hyperdoped Si (Si:Ti) has been demonstrated to have subbandgap photo response. In this work, we fabricated and characterized Si:Ti photodiodes and optimized the structure. At room temperature, the 3.5×10-3 EQE has been obtained at telecommunication wavelength 1550nm. And the detectable response extends until 2250nm. The results show the potential of Si:Ti materials being both Si:Ti photovoltaics and commercialized IR detection. To improve the efficiency of Si:Ti photodetectors, the affection of absorption rate, devices structure and the Si:Ti crystal quality is discussed.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hyperdoped Si thin films for infrared detection\",\"authors\":\"J. Mathews\",\"doi\":\"10.1117/12.2648363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hyperdoped Si materials extend Si response range into near infrared by forming intermediate band in Si band gap. Ti hyperdoped Si (Si:Ti) has been demonstrated to have subbandgap photo response. In this work, we fabricated and characterized Si:Ti photodiodes and optimized the structure. At room temperature, the 3.5×10-3 EQE has been obtained at telecommunication wavelength 1550nm. And the detectable response extends until 2250nm. The results show the potential of Si:Ti materials being both Si:Ti photovoltaics and commercialized IR detection. To improve the efficiency of Si:Ti photodetectors, the affection of absorption rate, devices structure and the Si:Ti crystal quality is discussed.\",\"PeriodicalId\":380113,\"journal\":{\"name\":\"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2648363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2648363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

超掺硅材料通过在硅带隙中形成中间带，将硅的响应范围扩展到近红外。Ti超掺Si (Si:Ti)具有亚带隙光响应。在这项工作中，我们制作和表征了Si:Ti光电二极管，并优化了结构。在室温下，在电信波长1550nm处获得了3.5×10-3 EQE。可探测的响应延伸至2250nm。结果表明，Si:Ti材料既具有Si:Ti光伏电池的潜力，又具有商业化红外探测的潜力。为了提高Si:Ti光电探测器的效率，讨论了吸收速率、器件结构和Si:Ti晶体质量对光电探测器效率的影响。

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Hyperdoped Si thin films for infrared detection

Hyperdoped Si materials extend Si response range into near infrared by forming intermediate band in Si band gap. Ti hyperdoped Si (Si:Ti) has been demonstrated to have subbandgap photo response. In this work, we fabricated and characterized Si:Ti photodiodes and optimized the structure. At room temperature, the 3.5×10-3 EQE has been obtained at telecommunication wavelength 1550nm. And the detectable response extends until 2250nm. The results show the potential of Si:Ti materials being both Si:Ti photovoltaics and commercialized IR detection. To improve the efficiency of Si:Ti photodetectors, the affection of absorption rate, devices structure and the Si:Ti crystal quality is discussed.

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International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors

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