下拉法生长压电单晶

Proceedings of the 2000 IEEE/EIA International Frequency Control Symposium and Exhibition (Cat. No.00CH37052) Pub Date : 2000-06-07 DOI:10.1109/FREQ.2000.887345

H. Tanaka, H. Sakamoto, S. Hashimoto, K. Nagai, K. Kodaira

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引用次数: 0

摘要

采用下拉(PD)法制备Li/sub 2/B/sub 4/O/sub 7/和LiNbO/sub 3/单晶。通过这种方法，可以很容易地通过凝固从坩埚底部的孔流出的熔体来获得单晶。采用PD法制备了无气泡Li/sub 2/B/sub 4/O/sub 7/晶体。位错密度估计约为1/spl sim/5/spl times/10/sup 4/ cm/sup -2/，比其他方法得到的结果略高。用PD法制备了无裂纹LiNbO/ sub3 /晶体。生长后的晶体透明，颜色略带黄色。由于添加了化学计量粉，晶体具有化学计量成分。

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Growth of piezoelectric single crystals by the pulling-down method

Li/sub 2/B/sub 4/O/sub 7/ and LiNbO/sub 3/ single crystals were grown by the pulling-down (PD) method. By the method, single crystals can be easily obtained by solidifying the melt flowing out of a hole at the bottom of a crucible. The bubble free Li/sub 2/B/sub 4/O/sub 7/ crystals were obtained by using the PD method. Dislocation density was estimated to be about 1/spl sim/5/spl times/10/sup 4/ cm/sup -2/, which was somewhat more than that obtained by other methods. Crack free LiNbO/sub 3/ crystals have also successfully grown by the PD method. The as-grown crystals were transparent with slightly yellow in color. The crystals had stoichiometric composition because of feeding stoichiometric powder.

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Proceedings of the 2000 IEEE/EIA International Frequency Control Symposium and Exhibition (Cat. No.00CH37052)

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