{"title":"微波干扰对CMOS集成电路中MOSFET器件影响的研究","authors":"K. Kim, A. Iliadis, V. Granatstein","doi":"10.1109/ISDRS.2003.1272381","DOIUrl":null,"url":null,"abstract":"In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuits\",\"authors\":\"K. Kim, A. Iliadis, V. Granatstein\",\"doi\":\"10.1109/ISDRS.2003.1272381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuits
In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.
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