三维过孔集成电路的CAD参考流程

Chang-Tzu Lin, D. Kwai, Yung-Fa Chou, Ting-Sheng Chen, Wen Ching Wu
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引用次数: 9

摘要

由于对高频和大带宽的需求不断增加,未来十年的计算能力和互连瓶颈对传统集成电路设计提出了挑战。三维大规模集成电路(3D-LSI)提供了实现这种高性能核心的机会,同时减少了长延迟。在本文中,我们提出了一个参考流程,用于实现可扩展的对背键合风格的3D过孔集成电路,该集成电路利用了一套成熟的2D集成电路物理设计工具。3D-LSI的第一个使能技术是硅通孔(TSV)。流中举例说明了两种TSV直径,分别为5µm和50µm。我们提出了一种易于采用的方法,通过考虑邻接层平面图产生的障碍物来解决TSV感知的混合尺寸放置,并受到一定的TSV对齐约束。在此基础上,提出了一种基于时钟树合成的均匀芯片技术,以显著降低芯片的时钟延迟和时钟偏差。每个层的混合大小的放置和CTS可以在没有迭代的情况下完成。据我们所知,没有工作曾经在文献中发表过讨论CTS的3D过尾集成在一个对背的方式。最后,为了完成所提出的二维时序驱动路由,改进的离线设计规则检查(DRC)和布局与原理图(LVS)验证进行了很好的验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CAD reference flow for 3D via-last integrated circuits
Next-decade computing power and interconnect bottle-neck challenge conventional IC design due to the ever increasing demands for high frequency and great bandwidth. Three-dimensional large-scale integration (3D-LSI) provides an opportunity to realize such high performance cores while reducing long latency. In this paper, we present a reference flow for the implementation of 3D via-last ICs in scalable face-to-back bonding style which leverages a mature set of 2D IC physical design tools. The first enabling technology of 3D-LSI is through-silicon via (TSV). Two kinds of TSV diameters are exemplified in the flow, namely, 5µm and 50µm. We propose an easy-to-adopt method to address the TSV-aware mixed-sized placement by considering the obstructions generated from adjacent-tier's floorplan, subject to certain TSV alignment constraints. Furthermore, the technique of clock tree synthesis (CTS) for a homogeneous die stack is developed to dramatically reduce the clock latency and skew. The mixed-sized placement and CTS of each tier can be done without iteration. To the best of our knowledge, no work has ever been published in literature discussing CTS for 3D via-last integration in a face-to-back fashion. Finally, to complete the proposed flow 2D timing-driven routing and modified off-line design rule check (DRC) and layout versus schematic (LVS) verification are performed very well.
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