转移衬底HBT技术中的基带放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722614

D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, M. Rodwell

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引用次数: 13

摘要

基带放大器已被制成转移衬底HBT工艺。达林顿放大器的直流增益为15.6 dB，带宽>50 GHz。镜面倍频放大器的直流增益为6.8 dB，带宽为86 GHz。这些放大器将用于未来的adc、dac和光纤接收器的工作，并用于基准传输衬底技术。

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Baseband amplifiers in transferred-substrate HBT technology

Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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