{"title":"单输运SiC冲击元件的动态响应仿真","authors":"R. Joshi, S. Pathak","doi":"10.1109/SECON.1995.513066","DOIUrl":null,"url":null,"abstract":"We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.","PeriodicalId":334874,"journal":{"name":"Proceedings IEEE Southeastcon '95. Visualize the Future","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulations for the dynamic response of single-transit SiC IMPATTs\",\"authors\":\"R. Joshi, S. Pathak\",\"doi\":\"10.1109/SECON.1995.513066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.\",\"PeriodicalId\":334874,\"journal\":{\"name\":\"Proceedings IEEE Southeastcon '95. Visualize the Future\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Southeastcon '95. Visualize the Future\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1995.513066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '95. Visualize the Future","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1995.513066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulations for the dynamic response of single-transit SiC IMPATTs
We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time.
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