Analytical Modeling of Drain Current of Junctionless Double Gate Si-MOSFET having Variable Barrier Height Considering Band Non-Parabolicity

In this paper a simple analytical model of the drain current of the junctionless double gate junctionless MOSFET with a variable barrier height has been presented. Band non-parabolicity is also assumed to increase the efficacy of the proposed model, applicable for the ultrathin nano devices. Variable barrier height uses intra band tunneling to enhance the ION/IOFF by reducing the off current of the device significantly. Also lower sub-threshold slope can be achieved using this proposed device structure. Simulation shows that the proposed data is matched with the simulated data with high accuracy.