相变材料的结晶行为:成核型和生长型结晶的比较

2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491) Pub Date : 2000-05-14 DOI:10.1117/12.399337

Guofu Zhou, Herman J. Borg, J. C. N. Rijpers, M. Lankhorst, J. J. L. Horikx

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引用次数: 41

摘要

对成核型和生长型材料的结晶行为进行了比较研究。讨论了相变层厚度、添加量和非晶标记尺寸对结晶速率的影响。由于掺杂sbte型材料的成核时间较长，可以单独测量成核概率，为光盘初始化提供重要信息。

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Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization

A comparative study of the crystallization behavior of nucleation- and growth-determined materials is presented. The influence of phase change layer thickness, additions and amorphous mark size on the crystallization rate is addressed. The long nucleation time of doped SbTe-type materials allows one to measure the nucleation probability separately, which may provide important information for initialization of optical storage disks.

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2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491)

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