纳米器件热效应的自洽模拟

D. Vasileska, S. Goodnick, K. Raleva
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引用次数: 1

摘要

在本文中,我们介绍了纳米级CMOS SOI器件中耦合电子-声子输运的最新模型,以便从微观的角度阐明器件尺寸,边界条件和各种材料策略对该技术中自加热的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-Consistent Simulation of Heating Effects in Nanoscale Devices
In this paper we present state of the art modeling of coupled electron-phonon transport in nanoscale CMOS SOI devices, in order to elucidate from a microscopic standpoint the role of device dimensions, boundary conditions and various material strategies on self-heating in this technology.
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