{"title":"采用数字间变压器和rc反馈的高平坦度宽带CMOS功率放大器","authors":"Ja-Soo Cho, Jaeyong Lee, Changkun Park","doi":"10.1109/WAMICON57636.2023.10124897","DOIUrl":null,"url":null,"abstract":"In this study, a Ka-band CMOS power amplifier (PA) with wide bandwidth and high flatness to support the full bandwidth of 5G mobile communication was proposed. To obtain wide bandwidth, RC-feedback and inter-digit transformer techniques were applied to the driver stage and matching networks, respectively. In addition, a diode linearizer was applied to the power stage to compensate for the deteriorated output power due to securing wide bandwidth. To verify the feasibility of the proposed Ka-band PA, we designed the PA using a 65-nm RFCMOS process. The designed PA occupies the core area of 0.174 mm2. The measured 1 dB bandwidth and gain were higher than 12 GHz and 13.1 dB, respectively. The measured saturation power, P1dB, and PAE were above 12.53 dBm, 10.8 dBm, and 9.18%, respectively","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wide Band CMOS Power Amplifier with High Flatness Using Inter-Digit Transformer and RC-Feedback\",\"authors\":\"Ja-Soo Cho, Jaeyong Lee, Changkun Park\",\"doi\":\"10.1109/WAMICON57636.2023.10124897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a Ka-band CMOS power amplifier (PA) with wide bandwidth and high flatness to support the full bandwidth of 5G mobile communication was proposed. To obtain wide bandwidth, RC-feedback and inter-digit transformer techniques were applied to the driver stage and matching networks, respectively. In addition, a diode linearizer was applied to the power stage to compensate for the deteriorated output power due to securing wide bandwidth. To verify the feasibility of the proposed Ka-band PA, we designed the PA using a 65-nm RFCMOS process. The designed PA occupies the core area of 0.174 mm2. The measured 1 dB bandwidth and gain were higher than 12 GHz and 13.1 dB, respectively. The measured saturation power, P1dB, and PAE were above 12.53 dBm, 10.8 dBm, and 9.18%, respectively\",\"PeriodicalId\":270624,\"journal\":{\"name\":\"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WAMICON57636.2023.10124897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAMICON57636.2023.10124897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide Band CMOS Power Amplifier with High Flatness Using Inter-Digit Transformer and RC-Feedback
In this study, a Ka-band CMOS power amplifier (PA) with wide bandwidth and high flatness to support the full bandwidth of 5G mobile communication was proposed. To obtain wide bandwidth, RC-feedback and inter-digit transformer techniques were applied to the driver stage and matching networks, respectively. In addition, a diode linearizer was applied to the power stage to compensate for the deteriorated output power due to securing wide bandwidth. To verify the feasibility of the proposed Ka-band PA, we designed the PA using a 65-nm RFCMOS process. The designed PA occupies the core area of 0.174 mm2. The measured 1 dB bandwidth and gain were higher than 12 GHz and 13.1 dB, respectively. The measured saturation power, P1dB, and PAE were above 12.53 dBm, 10.8 dBm, and 9.18%, respectively
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