{"title":"CNTFET基础知识和模拟","authors":"T. Dang, L. Anghel, R. Leveugle","doi":"10.1109/DTIS.2006.1708731","DOIUrl":null,"url":null,"abstract":"This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits","PeriodicalId":399250,"journal":{"name":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":"{\"title\":\"CNTFET basics and simulation\",\"authors\":\"T. Dang, L. Anghel, R. Leveugle\",\"doi\":\"10.1109/DTIS.2006.1708731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits\",\"PeriodicalId\":399250,\"journal\":{\"name\":\"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"64\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2006.1708731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2006.1708731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits